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| AP2304AGN Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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â¼ Simple Drive Requirement
D
â¼ Small Package Outline
â¼ Surface Mount Device
S
Description
SOT-23 G
Advanced Power MOSFETs utilized advanced processing techniques
to achieve the lowest possible on-resistance, extremely efficient and
cost-effectiveness device.
The SOT-23 package is universally used for all commercial-industrial
applications.
Product specification
AP2304AGN
BVDSS
RDS(ON)
ID
30V
117mΩ
2.5A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3, VGS @ 10V
Continuous Drain Current3, VGS @ 10V
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
30
±20
2.5
2
10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Max.
Value
90
Unit
â/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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