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AP2303N Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – P-CHANNEL ENHANCEMENT MODE | |||
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â¼ Simple Drive Requirement
â¼ Small Package Outline
D
â¼ Surface Mount Device
Description
S
SOT-23 G
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
Product specification
AP2303N
BVDSS
RDS(ON)
ID
-30V
240mΩ
- 1.9A
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
- 30
± 20
-1.9
-1.5
-10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/â
â
â
Max.
Value
90
Unit
â/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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