AP2302N Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE

Product specification
AP2302N
▼ Capable of 2.5V gate drive
▼ Small package outline
D
▼ Surface mount package
Description
S
SOT-23 _G
The Advanced Power MOSFETs from TY provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
BV_DSS
R_DS(ON)
I_D
20V
85mΩ
3.2A
D
Absolute Maximum Ratings
Symbol
Parameter
V_DS
V_GS
I_D@T_A=25℃
I_D@T_A=70℃
I_DM
P_D@T_A=25℃
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current³, V_GS @ 4.5V
Continuous Drain Current³, V_GS @ 4.5V
Pulsed Drain Current^1,2
Total Power Dissipation
Linear Derating Factor
T_STG
T_J
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient³
G
S
Rating
20
±12
3.2
2.6
10
1.38
0.01
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W/℃
℃
℃
Max.
Value
90
Unit
℃/W
http://www.twtysemi.com
[e-mail]
4008-318-123
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