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| AP1332GEU Datasheet, PDF (1/2 Pages) Advanced Power Electronics Corp. – N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |||
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â¼ Simple Gate Drive
D
â¼ Small Package Outline
â¼ 2KV ESD Rating(Per MIL-STD-883D)
â¼ RoHS Compliant
S
SOT-323 G
Description
The Advanced Power MOSFETs from TY provide the
designer with the best combination of fast switching,
low on-resistance and cost-effectiveness.
Product specification
AP1332GEU
BVDSS
RDS(ON)
ID
20V
600mΩ
600mA
D
G
S
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25â
ID@TA=70â
IDM
PD@TA=25â
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1,2
Total Power Dissipation
Linear Derating Factor
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
20
±6
600
470
2.5
0.35
0.003
-55 to 150
-55 to 150
Unit
V
V
mA
mA
A
W
W/â
â
â
Max.
Value
360
Unit
â/W
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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