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AM3961P Datasheet, PDF (1/2 Pages) Analog Power – P-Channel 60-V (D-S) MOSFET | |||
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Key Features:
⢠Low rDS(on) trench technology
⢠Low thermal impedance
⢠Fast switching speed
Typical Applications:
⢠White LED boost converters
⢠Automotive Systems
⢠Industrial DC/DC Conversion Circuits
Product specification
AM3961P
VDS (V)
-60
PRODUCT SUMMARY
rDS(on) (mΩ)
310 @ VGS = -10V
465 @ VGS = -4.5V
ID(A)
-1.6
-1.3
ABSOLUTE MAXIMUM RATINGS (TA = 25°C UNLESS OTHERWISE NOTED)
Parameter
Symbol Limit
Drain-Source Voltage
VDS
-60
Gate-Source Voltage
VGS
±20
Continuous Drain Current a
Pulsed Drain Current b
Continuous Source Current (Diode Conduction) a
TA=25°C
TA=70°C
ID
-1.6
-1.3
IDM
-10
IS
-1.5
Power Dissipation a
TA=25°C
TA=70°C
PD
1.15
0.7
Operating Junction and Storage Temperature Range
TJ, Tstg -55 to 150
Units
V
A
A
W
°C
Maximum Junction-to-Ambient a
THERMAL RESISTANCE RATINGS
Parameter
t <= 10 sec
Steady State
Symbol Maximum
RθJA
110
150
Units
°C/W
Notes
a. Surface Mounted on 1â x 1â FR4 Board.
b. Pulse width limited by maximum junction temperature
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