AM3455P Datasheet, PDF (1/2 Pages) Analog Power – P-Channel 30V (D-S) MOSFET

These miniature surface mount MOSFETs
utilize High Cell Density process. Low r_DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are power switch, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Low Gate Charge
• Fast Switch
• Miniature TSOP-6 Surface Mount Package
Saves Board Space
Product specification
AM3455P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
-30 ^{0.112 @ VGS = 10 V}
0.172 @ V_GS = 4.5V
I_D (A)
3.4
2.7
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
-30
V
±20
3.4
2.6
A
±20
Continuous Source Current (Diode Conduction)^a
I_S
1.7
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
2.0
W
1.3
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol Maximum Units
R_{T HJA}
62.5
o_C/W
110
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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