AM3447P Datasheet, PDF (1/2 Pages) Analog Power – P-Channel 40-V (D-S) MOSFET

These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
Product specification
AM3447P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
-40 ^{0.070 @ VGS = -10V}
0.090 @ V_GS = -4.5V
I_D (A)
-4.4
-3.9
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
V_DS
-40
V_GS
±20
T_A=25^oC
T_A=70^oC
I_D
-4.0
-3.2
I_DM
±20
I_S
-1.7
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
2.0
1.3
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady state
Symbol
R_THJA
Maximum
62.5
110
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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