AM2328NE Datasheet, PDF (1/2 Pages) Analog Power – N-Channel 20V (D-S) MOSFET

Product specification
AM2328NE
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
20
0.018 @ V_GS = 4.5 V
0.021 @ V_GS = 2.5V
I_D (A)
7.0
6.5
SOT-23
D
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
Top View
G
G
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
S
ESD Protected
D
S
N-Channel
MOSFET
2000V
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
VGS
TA=25^oC
TA=70^oC
I_D
20
V
±8
7.0
5.7
A
I_DM
±20
I_S
1.6
A
TA=25^oC
TA=70^oC
P_D
1.3
W
0.9
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol Maximum Units
R_{T HJA}
100
o_C/W
166
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2