AM2326N Datasheet, PDF (1/2 Pages) Analog Power – N-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r_DS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are DC-DC
converters, power management in portable
and battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SOT-23 Surface Mount Package
Saves Board Space
Product specification
AM2326N
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.070 @ V_GS = 4.5V
20
0.080@ V_GS = 2.5V
0.120@ V_GS = 1.8V
I_D (A)
2.2
2.0
1.8
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
20
V
±8
2.2
1.8
A
I_DM
8
I_S
0.6
A
T_A=25^oC
T_A=70^oC
P_D
1.25
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol Maximum
R_{T HJA}
100
166
Units
o_C/W
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