AM2317P Datasheet, PDF (1/2 Pages) Analog Power – P - Channel Logic Level MOSFET

These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
Product specification
AM2317P
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
-30
0.30 @ V_GS = -10 V
0.50 @ V_GS = -4.5V
I_D (A)
-1.0
-0.9
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
V_DS
VGS
TA=25^oC
TA=70^oC
I_D
-30
V
±20
±0.9
±0.75 ^A
I_DM
±10
I_S
0.4
A
TA=25^oC
TA=70^oC
P_D
0.5
W
0.42
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
RT HJA
M aximum
250
285
Units
o_C/W
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