AM2300N Datasheet, PDF (1/2 Pages) Analog Power – N-Channel 20-V (D-S) MOSFET

These miniature surface mount MOSFETs
utilize High Cell Density process. Low r_DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are DC-DC converters, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Low gate charge 7nC
• High performance
• High current handling
• Miniature SOT-23 Surface Mount Package
Saves Board Space
Product specification
AM2300N
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (Ω)
0.035 @ V_GS = 4.5V
0.050 @ V_GS = 2.5V
I_D (A)
4.3
3.5
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
I_S
20
V
±8
4.3
3.3
A
10
0.46
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
1.25
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol
R_THJA
Maximum
100
166
Units
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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