AM1960NE Datasheet, PDF (1/2 Pages) Analog Power – N-Channel 60-V (D-S) MOSFET

Product specification
AM1960NE
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe S1
SC70-6 saves board space
G1
• Fast switching speed
D2
• High performance trench technology
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
60
2.0 @ V_GS = 4.5V
3.0 @ V_GS = 2.5V
I_D (A)
0.32
0.26
SC70-6
Top View
16
25
34
D₁
D₂
G₁
G₂
D1
G2
S2
S₁
S₂
N-Channel MOSFET ^{N-Channel MOSFET}
ESD Protected
2000V
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
20
Continuous Drain Current^a
T_A=25^oC
T_A=70^oC
I_D
0.32
0.26
Pulsed Drain Current^b
I_DM
0.7
Continuous Source Current (Diode Conduction)^a
I_S
0.25
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
0.3
0.21
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol Maximum Units
R_THJA
415
o_C/W
460
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