AM1330N Datasheet, PDF (1/2 Pages) Analog Power – N-Channel 30V (D-S) MOSFET

These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SC70-3 saves board space
• Fast switching speed
• High performance trench technology
Product specification
AM1330N
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.058 @ V_GS = 10 V
0.082 @ V_GS = 4.5V
I_D (A)
2.0
1.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
30
V
±20
2.0
1.7
A
±20
Continuous Source Current (Diode Conduction)^a
I_S
1.6
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
0.34
W
0.22
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol Maximum Units
R_{T HJA}
100
o_C/W
166
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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