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| 8550SS Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
8550SS TRANSISTOR (PNP)
FEATURES
z General Purpose Switching and Amplification.
TO â 92
1.EMITTER
2.COLLECTOR
3.BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-25
-5
-1.5
1
125
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
fT
Test conditions
IC= -0.1mA,IE=0
IC=-0.1mA,IB=0
IE=-0.1mA,IC=0
VCB=-40V,IE=0
VCE=-20V,IB=0
VEB=-5V,IC=0
VCE=-1, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA,IB=-80mA
IC=-800mA,IB=-80mA
VCE=-10V,IC=-50mA,f=30MHz
Min Typ Max Unit
-40
V
-25
V
-5
V
-0.1 μA
-0.1 μA
-0.1 μA
85
300
40
-0.5
V
-1.2
V
100
MHz
CLASSIFICATION OF hFE(1)
RANK
RANGE
B
85-160
C
120-200
D
160-300
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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