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| 8050SS Datasheet, PDF (1/2 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
8050SS TRANSISTOR (NPN)
FEATURES
z General Purpose Switching and Amplification.
TO â 92
1. EMITTER
2. COLLECTOR
3. BASE
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
40
25
5
1.5
1
125
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Collector output capacitance
Transition frequency
Symbol
Test conditions
Min Typ Max Unit
V(BR)CBO IC= 0.1mA,IE=0
40
V
V(BR)CEO IC=0.1mA,IB=0
25
V
V(BR)EBO IE=0.1mA,IC=0
5
V
ICBO
VCB=40V,IE=0
0.1 μA
ICEO
VCE=20V,IB=0
0.1 μA
IEBO
VEB=5V,IC=0
0.1 μA
hFE(1)
VCE=1V, IC=100mA
85
300
hFE(2)
VCE=1V, IC=800mA
40
VCE(sat) IC=800mA,IB=80mA
0.5
V
VBE (sat) IC=800mA,IB=80mA
1.2
V
VBE
VCE=1V, IC=10mA
1.0
V
Cob
VCB=10V,IE=0, f=1MHz
15
pF
fT
VCE=10V,IC= 50mA, f=30MHz 100
MHz
CLASSIFICATION OF hFE(1)
RANK
B
RANGE
85-160
C
120-200
D
160-300
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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