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| 8050S Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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Product specification
TO-92 Plastic-Encapsulate Transistors
8050S TRANSISTOR (NPN)
FEATURES
z Complimentary to 8550S
z Collector Current: IC=0.5A
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
Parameter
Value Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
0.5
A
PC
Collector Power Dissipation
0.625
W
TJ
Junction Temperature
Tstg
Storage Temperature
150
â
-55-150
â
TO-92
1.EMITTER
2.COLLECTOR
3.BASE
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
V(BR)CBO IC= 100μA, IE=0
40
Collector-emitter breakdown voltage
V(BR)CEO IC= 0.1mA, IB=0
25
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
5
Collector cut-off current
ICBO
VCB= 40 V , IE=0
Collector cut-off current
ICEO
VCE= 20 V , IB=0
Emitter cut-off current
IEBO
VEB= 5V, IC=0
DC current gain
hFE(1)
VCE= 1V, IC= 50mA
85
hFE(2)
VCE= 1V, IC= 500mA
50
Collector-emitter saturation voltage
VCE(sat) IC=500mA, IB=50mA
Base-emitter saturation voltage
Transition frequency
VBE(sat) IC=500mA, IB=50mA
fT
VCE= 6V, IC=20mA
f =30MHz
150
CLASSIFICATION OF hFE(1)
Rank
B
Range
85-160
C
120-200
D
160-300
Max
Unit
V
V
V
0.1
μA
0.1
μA
0.1
μA
400
0.6
V
1.2
V
MHz
D3
300-400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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