4N60 Datasheet, PDF (1/1 Pages) Unisonic Technologies – 4 Amps, 600 Volts N-CHANNEL POWER MOSFET

Product specification
TO-252 Plastic-Encapsulate Transistors
4N60 MOSFET(N-Channel)
FEATURES
Robust High Voltage Terminrtion
Avalanche Energy Specified
Source-to-Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Diode is Characterrized for Use in Bridge Circuits
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol
（符号）
VDS
VGS
ID
PD
EAS
TJ,Tstg
Parameter
（参数名称）
Drain-Source voltage
Gate-Source voltage
Drain current-Continuous
Maximum Power Dissipation
Single pulse avalanche energy
Operating Junction and Storage Temperature Range
Value
（额定值）
600
±30
4
2
80
-55-150
Units
（单位）
V
V
A
W
mJ
℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-body Leakage
Gate-Threshold Voltage
Drain-Source On-Resistance
Diode Forward Voltage(Note3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Test conditions
V(BR)DSS VGS=0V,ID=250uA
IDSS
IGSS
VDS=600V, VGS=0V
VDS=0V, VGS=±30V
Vth(GS) VDS= VGS, ID=250 uA
RDS(ON)
VSD
Ciss
Coss
Crss
VGS=10V, ID=2A
VGS=0V, ID=4A
VDS=25V, VGS=0V,
f=1MHz
MIN
TYP
MAX
600
10
±100
2
4
4
1.5
540
125
8.0
UNIT
V
uA
nA
V
Ω
V
pF
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