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| 3DD13005 Datasheet, PDF (1/1 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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Product specification
TO-263-3L Plastic-Encapsulate Transistors
3DD13005 TRANSISTOR (NPN)
TO-263-3L
FEATURES
Power switching applications
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Value
700
400
9
4
2
62.5
150
-55~+150
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Storage time
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE(1)
hFE(2)
hFE(3)
VCE(sat)1
VCE(sat)2
VBE(sat)
fT
tS
Test conditions
IC= 1mA,IE=0
IC= 10mA,IB=0
IE= 1mA,IC=0
VCB=700V,IE=0
VCE=400V,IB=0
VEB=7V,IC=0
VCE=5V, IC=1A
VCE=5V, IC=10mA
VCE=5V, IC=2A
IC=1A,IB=0.2A
IC=4A,IB=1A
IC=2A,IB=0.5A
VCE=10V, IC=500mA,f=1MHz
IC=250mA
1 . BASE
2. COLLECTOR
3. EMITTER
Min Typ Max
700
400
9
1
0.1
0.05
10
60
5
8
0.3
0.8
1.6
5
2.5
5
Unit
V
V
V
mA
mA
mA
V
V
V
MHz
us
CLASSIFICATION of hFE(1)
Range 10-15 15-20
20-25
25-30
30-35
35-40
40-45
45-50
50-55
55-60
CLASSIFICATION of tS
Rank
A
Range
2.5-3
B1
3-3.5
B2
3.5-4
C1
4-4.5
C2
4.5-5
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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