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3DD13002 Datasheet, PDF (1/2 Pages) List of Unclassifed Manufacturers – TRANSISTOR(NPN) | |||
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Product specification
TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors
3DD13002 TRANSISTOR (NPN)
FEATURE
Power Switching Applications
MAXIMUM RATINGS(Ta=25â unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector -Base Voltage
600
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current -Continuous
1
A
PC
Collector Power Dissipation
1.25
W
TJ
Junction Temperature
150
â
Tstg
Storage Temperature
-55~150
â
TO-251-3L
TO-252-2L
1. BASE
2. COLLECTOR
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Min
Typ
Collector-base breakdown voltage
V(BR)CBO
IC= 100μAï¼IE=0
600
Collector-emitter breakdown voltage V(BR)CEO
IC= 1mAï¼IB=0
400
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μAï¼IC=0
6
Collector cut-off current
ICBO
VCB= 600Vï¼IE=0
ICEO
VCB= 400Vï¼IE=0
Emitter cut-off current
IEBO
VEB= 7Vï¼ IC=0
Dc current gain
hFE1
VCE= 10 V, IC= 200mA
9
hFE2
VCE= 10 V, IC= 0.25mA
5
Collector-emitter saturation voltage
VCE(sat)
IC=200mA, IB= 40mA
Base-emitter saturation voltage
VBE(sat)
IC=200mA, IB= 40mA
Transition frequency
VCE=10V, IC=100mA
fT
5
f =1MHz
Fall time
Storage time
tf
IC=1A, IB1=-IB2=0.2A
ts
VCC=100V
Max Unit
V
V
V
100
µA
100
µA
100
µA
40
0.5
V
1.1
V
MHz
0.5
µs
2.5
µs
CLASSIFICATION OF hFE1
Range
9-15
15-20
20-25
25-30
30-35
35-40
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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