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| 3CA8772 Datasheet, PDF (1/1 Pages) List of Unclassifed Manufacturers – TO-126 Plastic-Encapsulate Transistors | |||
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Product specification
TO-126 Plastic-Encapsulate Transistors
3CA8772 TRANSISTOR (PNP)
TO â 126
FEATURES
z High Current
z Low Voltage
MAXIMUM RATINGS (Ta=25â unless otherwise noted)
Symbol
VCBO
VCEO
VEBO
IC
PC
RθJA
Tj
Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Thermal Resistance From Junction To Ambient
Junction Temperature
Storage Temperature
Value
-40
-30
-6
-3
1.25
100
150
-55~+150
1. EMITTER
2. COLLECTOR
3. BASE
Unit
V
V
V
A
W
â/W
â
â
ELECTRICAL CHARACTERISTICS (Ta=25â unless otherwise specified)
Parameter
Symbol
Test conditions
Collector-base breakdown voltage
V(BR)CBO
IC=-100µA,IE=0
Collector-emitter breakdown voltage
V(BR)CEO
IC=-10mA,IB=0
Emitter-base breakdown voltage
V(BR)EBO
IE=-100µA,IC=0
Collector cut-off current
ICBO
VCB=-40V,IE=0
Collector cut-off current
ICEO
VCE=-30V,IB=0
Emitter cut-off current
IEBO
VEB=-6V,IC=0
DC current gain
hFE
VCE=-2V, IC=-1A
Collector-emitter saturation voltage
VCE(sat)
IC=-2A,IB=-0.2A
Transition frequency
fT
VCE=-5V,IC=-0.1A, f=10MHz
Min Typ Max Unit
-40
V
-30
V
-6
V
-10 μA
-10 μA
-10 μA
60
400
-0.5 V
50
MHz
CLASSIFICATION OF hFE
RANK
R
RANGE
60-120
O
100-200
Y
160-320
GR
200-400
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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