2SK3918 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
IC
Product specification
2SK3918
Features
Low on-state resistance
RDS(on)1 = 7.5 m MAX. (VGS = 10 V, ID = 24 A)
Low Ciss: Ciss = 1300 pF TYP.
5 V drive available
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
Absolute Maximum Ratings Ta = 25
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Symbol
Rating
Unit
VDSS
25
V
VGSS
20
V
ID
48
A
Idp *
192
A
1.0
PD
W
29
Tch
150
Tstg
-55 to +150
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Testconditons
VDS=25V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=12A
VGS=10V,ID=24A
VGS=5.0V,ID=12A
VDS=10V,VGS=0,f=1MHZ
ID=24A,VGS(on)=10V,RG=10
,VDD=12.5V
VDD = 20V
VGS = 10 V
ID =48A
IF = 48A, VGS = 0 V
IF = 48 A, VGS = 0 V
di/dt = 100 A/ ìs
Min Typ Max Unit
10
A
100 nA
2.5 2.5 3.0 V
6 12
S
5.9 7.5 mÙ
11 22.2 mÙ
1300
pF
310
pF
220
pF
13
ns
14
ns
38
ns
14
ns
28
nC
5
nC
10
nC
0.98
V
27
ns
15
nC
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