2SK3749 Datasheet, PDF (1/2 Pages) NEC – N-CHANNEL MOSFET FOR HIGH-SPEED SWITCHING

Product specification
2SK3749
DESCRIPTION
The 2SK3749 is an N-channel vertical MOS FET. Because
it can be driven by a voltage as low as 2.5 V and it is not
necessary to consider a drive current, this FET is ideal as an
actuator for low-current portable systems such as headphone
stereos and video cameras.
PACKAGE DRAWING (Unit: mm)
2.1 ± 0.1
1.25 ± 0.1
2
1
3
FEATURES
• Gate can be driven by 2.5 V
• Because of its high input impedance, there’s no need to
consider drive current
Marking
ORDERING INFORMATION
PART NUMBER
2SK3749
Marking: G27
PACKAGE
SC-70 (SSP)
1 : Source
2 : Gate
3 : Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
50
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±7.0
V
Drain Current (DC)
Drain Current (pulse) ^Note
ID(DC)
±100
mA
ID(pulse)
±200
mA
Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg −55 to +150 °C
Note PW ≤ 10 ms, Duty Cycle ≤ 50%
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
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