2SK3716 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
TraMnOsiSstFIoCErsT
Product specification
2SK3716
Features
Super low on-state resistance:
RDS(on)1 = 6.5 mÙ MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 9.1 mÙ MAX. (VGS = 4.5 V, ID = 30 A)
Low Ciss: Ciss = 2700 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Rating
Unit
40
V
20
V
60
A
240
A
1.0
W
84
150
-55 to +150
Unit: mm
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=40V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=30A
VGS=10V,ID=30A
VGS=4.5V,ID=30A
VDS=10V,VGS=0,f=1MHZ
ID=30A,VGS(on)=10V,RG=0 ,VDD=20V
VDD = 32V
VGS = 10 V
ID =60A
Min Typ Max Unit
10
A
10
A
1.5 2.0 2.5 V
22 43
S
5.2 6.5 mÙ
6.6 9.1 mÙ
2700
pF
770
pF
290
pF
11
ns
13
ns
69
ns
14
ns
50
nC
9
nC
13
nC
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