2SK3712 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
TransistIoCrs
Product specification
2SK3712
Features
High voltage: VDSS = 250 V
Gate voltage rating: 30 V
Low on-state resistance
RDS(on) = 0.58 MAX. (VGS = 10 V, ID = 4.5 A)
Low Ciss: Ciss = 450 pF TYP. (VDS = 10 V, ID = 0 A)
Built-in gate protection diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
250
V
VGSS
30
V
ID
9.0
A
Idp *
27
A
1.0
PD
W
40
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=250V,VGS=0
10
A
VGS= 30V,VDS=0
10
A
VDS=10V,ID=1mA
2.5 3.5 4.5 V
VDS=10V,ID=4.5A
3
6
S
VGS=10V,ID=4.5A
0.4 0.58
450
pF
VDS=10V,VGS=0,f=1MHZ
100
pF
40
pF
8
ns
8
ns
ID=4.5A,VGS(on)=10V,RG=0 ,VDD=125V
21
ns
6
ns
VDD = 200V
VGS = 10 V
ID =9.0A
14
nC
3
nC
7
nC
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