2SK3668 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
TransistIoCrs
Product specification
2SK3668
Features
Low gate charge
QG = 26 nC TYP. (VDD = 320 V, VGS = 10 V, ID = 10 A)
Gate voltage rating: 30 V
Low on-state resistance
RDS(on) = 0.55 MAX. (VGS = 10 V, ID = 5.0 A)
Surface mount package available
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
Rating
Unit
400
V
30
V
10
A
34
A
1.5
W
100
150
-55 to +150
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
VF(S-D)
trr
Qrr
Testconditons
VDS=400V,VGS=0
VGS= 30V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=5.0A
VGS=10V,ID=5.0A
VDS=10V,VGS=0,f=1MHZ
ID=5.0A,VGS(on)=10V,RG=10
,VDD=150V
VDD = 320V
VGS = 10 V
ID =10A
IF = 10 A, VGS = 0 V
IF = 10 A, VGS = 0 V
di/dt = 100 A/ ìs
Min Typ Max Unit
10
A
100 nA
2.5
3.5 V
3.0 5.6
S
0.4 0.55
1320
pF
230
pF
13
pF
18
ns
8
ns
44
ns
4
ns
26
nC
7
nC
11
nC
0.9
V
350
ns
2.7
ìC
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