2SK3663 Datasheet, PDF (1/2 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Product specification
2SK3663
DESCRIPTION
The 2SK3663 is a switching device which can be driven directly
by a 2.5 V power source.
The 2SK3663 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such as
power switch of portable machine and so on.
FEATURES
• 2.5 V drive available
• Low on-state resistance
RDS(on)1 = 0.57 Ω MAX. (VGS = 4.5 V, ID = 0.30 A)
RDS(on)2 = 0.60 Ω MAX. (VGS = 4.0 V, ID = 0.30 A)
RDS(on)3 = 0.88 Ω MAX. (VGS = 2.5 V, ID = 0.15 A)
ORDERING INFORMATION
PART NUMBER
2SK3663
Remark Marking : G26
PACKAGE
SC-70 (SSP)
PACKAGE DRAWING (Unit: mm)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC)
Drain Current (pulse) ^Note1
Total Power Dissipation ^Note2
ID (DC)
±0.5
A
ID (pulse)
±2.0
A
PT
0.2
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg −55 to +150 °C
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board of 2500 mm² x 1.1 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
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