2SK3652 Datasheet, PDF (1/2 Pages) Guangdong Kexin Industrial Co.,Ltd – N-channel Enhancement Mode MOSFET

SMD Type
TransistIoCrs
Product specification
2SK3652
Features
Low on-resistance, low Qg
High avalanche resistance
For high-speed switching
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain-source surrender voltage
VDSS
230
V
Gate-source surrender voltage
VGSS
30
V
Drain current
ID
50
A
Peak drain current
IDP
200
A
Avalanche energy capability *
EAS
2 200
mJ
Power dissipation Ta = 25
Power dissipation
3
PD
W
100
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to +150
* L = 1 mH, IL = 50 A, VDD = 100 V, 1 pulse, Ta = 25
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2