2SK3640 Datasheet, PDF (1/2 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
Features
Low on-state resistance
RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 9 A)
RDS(on)2 = 40 m MAX. (VGS = 4.5 V, ID = 9 A)
Low Ciss: Ciss = 570 pF TYP.
Built-in gate protection diode
TransistIoCrs
Product specification
2SK3640
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
16
V
Drain Current(DC)
ID(DS)
19
A
Drain Current(pulse) *1
ID(pulse)
76
A
Total Power Dissipation (TC = 25 )
PT
20
W
Total Power Dissipation
PT
1
W
Channel Temperature
Tch
150
Storage temperature
Tstg
-55 to +150
Single Avalanche Current *2
IAS
10
A
Single Avalanche Energy *2
EAS
10
mJ
*1PW 10 s, Duty Cycle 1%
*2. Starting Tch = 25 , VDD = 15 V, RG = 25 , VGS = 20 0 V, L = 100 H
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