2SK3637 Datasheet, PDF (1/2 Pages) Panasonic Semiconductor – Silicon N-channel power MOSFET

SMD Type
TransistIoCrs
Product specification
2SK3637
Features
Low on-resistance, low Qg
High avalanche resistance
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
+0.2
2.54-0.2
+0.1
5.08-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain-source surrender voltage
Gate-source surrender voltage
Drain current
Peak drain current
Avalanche energy capability
Power dissipation Ta = 25
Power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
200
V
VGSS
30
V
ID
50
A
IDP
200
A
EAS
2 000
mJ
3
PD
W
100
Tch
150
Tstg
-55 to +150
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