2SK3635 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
IC
Product specification
2SK3635
Features
High voltage: VDSS = 200 V
Gate voltage rating: 30 V
Low on-state resistance
RDS(on) = 0.43 MAX. (VGS = 10 V, ID = 4.0 A)
Low Ciss: Ciss = 390 pF TYP.
Built-in gate protection diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
200
V
VGSS
30
V
ID
8.0
A
Idp *
24
A
24
PD
W
1.0
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=200V,VGS=0
10
A
VGS= 30V,VDS=0
10
A
VDS=10V,ID=1mA
2.5 3.5 4.5 V
VDS=10V,ID=4.0A
3.
5
S
VGS=10V,ID=4.0A
0.34 0.43
390
pF
VDS=10V,VGS=0,f=1MHZ
95
pF
45
pF
5
ns
7
ns
ID=4.0A,VGS(on)=10V,RG=0 ,VDD=100V
19
ns
6
ns
VDD = 160V
VGS = 10 V
ID =8.0A
12
nC
2
nC
6
nC
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