2SK3576 Datasheet, PDF (1/2 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

Product specification
2SK3576
DESCRIPTION
The 2SK3576 is a switching device which can be driven
directly by a 2.5 V power source.
The device features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
FEATURES
• 2.5V drive available
• Low on-state resistance
RDS(on)1 = 50 mΩ MAX. (VGS = 4.5 V, ID = 2.0 A)
RDS(on)2 = 53 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
RDS(on)3 = 75 mΩ MAX. (VGS = 2.5 V, ID = 2.0 A)
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3576
Marking: XK
SC-96 (Mini Mold Thin Type)
PACKAGE DRAWING (Unit: mm)
0.4
+0.1
–0.05
0.16^{+–00..016}
3
1
2
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1 : Gate
2 : Source
3 : Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
20
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±12
V
Drain Current (DC) (TA = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±4.0
A
ID(pulse)
±16
A
Total Power Dissipation (TA = 25°C)
Total Power Dissipation (TA = 25°C) ^Note2
PT1
0.2
W
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 board, t ≤ 5 sec.
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
http://www.twtysemi.com
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4008-318-123
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