2SK3480 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET

SMD Type
Product specification
2SK3480
Features
Super low on-state resistance:
RDS(on)1 = 31 m MAX. (VGS = 10 V, ID = 25A)
RDS(on)2 = 36 m MAX. (VGS = 4.5 V, ID = 25 A)
Low Ciss: Ciss = 3600 pF TYP.
Built-in gate protection diode
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
100
V
VGSS
20
V
ID
50
A
Idp *
100
A
84
PD
W
1.5
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
VDS=100V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=25A
VGS=10V,ID=25A
VGS=4.5V,ID=25A
VDS=10V,VGS=0,f=1MHZ
ID=25A,VGS(on)=10V,RG=0 ,VDD=50V
ID =50A, VDD =80V, VGS = 10 V
Min Typ Max Unit
10
A
10
A
1.5 2.0 2.5 V
17 34
S
25 31 m
27 36 m
3600
pF
360
pF
190
pF
15
ns
11
ns
68
ns
6.0
ns
74
nC
10
nC
20
nC
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