2SK3434 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
Product specification
2SK3434
Features
Super low on-state resistance:
RDS(on)1 = 20m MAX. (VGS = 10 V, ID = 24A)
RDS(on)2 = 31 m MAX. (VGS = 4 V, ID = 24A)
Low Ciss: Ciss =2100 pF TYP.
Built-in gate protection diode
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
48
A
Idp *
192
A
56
PD
W
1.5
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=20A
13 27
S
VGS=10V,ID=24A
16 20 m
VGS=4V,ID=24A
22 31 m
2100
pF
VDS=10V,VGS=0,f=1MHZ
340
pF
170
pF
40
ns
400
ns
ID=24A,VGS(on)=10V,RG=10 ,VDD=30V
120
ns
160
ns
40
nC
ID =48A, VDD =48V, VGS = 10 V
7
nC
11
nC
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