2SK3433 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
Product specification
2SK3433
Features
Super low on-state resistance:
RDS(on)1 = 26m MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 41 m MAX. (VGS = 4 V, ID = 42 A)
Low Ciss: Ciss =1500 pF TYP.
Built-in gate protection diode
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
40
A
Idp *
160
A
47
PD
W
1.5
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=20A
11 22
S
VGS=10V,ID=20A
22 26 m
VGS=4V,ID=20A
29 41 m
1500
pF
VDS=10V,VGS=0,f=1MHZ
250
pF
120
pF
35
ns
320
ns
ID=20A,VGS(on)=10V,RG=10 ,VDD=30V
89
ns
120
ns
30
nC
ID =40A, VDD =48V, VGS = 10 V
5
nC
8
nC
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 1