2SK3431 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
MOSFET
Product specification
2SK3431
Features
Super low on-state resistance:
RDS(on)1 = 5.6m MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 8.9 m MAX. (VGS = 4 V, ID = 42 A)
Low Ciss: Ciss = 6100 pF TYP.
Built-in gate protection diode
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
40
V
VGSS
20
V
ID
83
A
Idp *
332
A
100
PD
W
1.5
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=40V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=42A
30 60
S
VGS=10V,ID=42A
4.5 5.6 m
VGS=4V,ID=42A
6.2 8.9 m
6100
pF
VDS=10V,VGS=0,f=1MHZ
1400
pF
700
pF
120
ns
1800
ns
ID=42A,VGS(on)=10V,RG=10 ,VDD=20V
350
ns
440
ns
110
nC
ID =83A, VDD =32V, VGS = 10 V
18
nC
31
nC
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