2SK3430 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
Product specification
2SK3430
Features
Super low on-state resistance:
RDS(on)1 = 7.3 m MAX. (VGS = 10 V, ID = 40 A)
RDS(on)2 = 15 m MAX. (VGS = 4 V, ID = 40 A)
Low Ciss: Ciss = 2800 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS
ID
Idp *
PD
Tch
Tstg
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Rating
Unit
30
V
20
V
80
A
200
A
84
W
1.5
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=40V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=40A
20 40
S
VGS=10V,ID=40A
5.9 7.3 m
VGS=4V,ID=40A
10.5 15 m
2800
pF
VDS=10V,VGS=0,f=1MHZ
730
pF
320
pF
110
ns
1800
ns
ID=40A,VGS(on)=10V,RG=10 ,VDD=20V
170
ns
350
ns
50
nC
ID =80A, VDD =32V, VGS = 10 V
10
nC
14
nC
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