2SK3408 Datasheet, PDF (1/2 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Product specification
2SK3408
DESCRIPTION
The 2SK3408 is a switching device which can be driven
directly by a 4-V power source.
The 2SK3408 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of dynamic clamp of relay and so on.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
0.16⁺–00..016
3
FEATURES
• Can be driven by a 4-V power source
• Low on-state resistance
RDS(on)1 = 195 mΩ MAX. (VGS = 10 V, ID = 0.5 A)
RDS(on)2 = 250 mΩ MAX. (VGS = 4.5 V, ID = 0.5 A)
RDS(on)3 = 260 mΩ MAX. (VGS = 4.0 V, ID = 0.5 A)
• Built-in G-S protection diode against ESD.
ORDERING INFORMATION
1
2
0 to 0.1
0.95 0.95
1.9
2.9 ±0.2
0.65
0.9 to 1.1
1 : Gate
2 : Source
3 : Drain
PART NUMBER
2SK3408
PACKAGE
SC-96 Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
43±5
V
Drain to Gate Voltage (VGS = 0 V)
VDGS
43±5
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ^Note1
ID(DC)
±1.0
A
ID(pulse)
±4.0
A
Total Power Dissipation (TC = 25°C)
PT1
Total Power Dissipation (TA = 25°C) ^Note2
PT2
0.2
W
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: XF
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on FR-4 Board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
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