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2SK3402 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOSFET
SMD Type
IC
Product specification
2SK3402
Features
Low on-resistance
RDS(on)1 =15 m MAX. (VGS = 10 V, ID = 18A)
RDS(on)2 = 22 m MAX. (VGS = 4.0 V, ID = 18A)
Low Ciss : Ciss = 3200 pF TYP.
Built-in gate protection diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
36
A
Idp *
144
A
40
PD
W
1.0
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=18A
13 27
S
VGS=10V,ID=18A
12 15 m
VGS=4.0V,ID=18A
15 22 m
3200
pF
VDS=10V,VGS=0,f=1MHZ
520
pF
270
pF
36
ns
310
ns
ID=18A,VGS(on)=10V,RG=10 ,VDD=30V
170
ns
180
ns
61
nC
ID =36A, VDD = 48 V, VGS = 10 V
8.2
nC
17
nC
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