2SK3385 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
Product specification
2SK3385
Features
Low on-resistance
RDS(on)1 = 28 m MAX. (VGS = 10 V, ID = 15 A)
RDS(on)2 = 45 m MAX. (VGS = 4.0 V, ID = 15 A)
Low Ciss : Ciss = 1500 pF TYP.
Built-in gate protection diode
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
30
A
Idp *
100
A
36
PD
W
1.0
Tch
150
Tstg
-55 to +150
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=15A
8 16
S
VGS=10V,ID=15A
22 28 m
VGS=4.0V,ID=15A
31 45 m
1500
pF
VDS=10V,VGS=0,f=1MHZ
250
pF
130
pF
22
ns
250
ns
ID=15A,VGS(on)=10V,RG=10 ,VDD=30V
77
ns
77
ns
30
nC
ID =30 A, VDD = 48 V, VGS = 10 V
4.8
nC
8.6
nC
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