2SK3366 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
TraMnOsiSstFIoCErsT
Product specification
2SK3366
Features
Super low on-state resistance:
RDS(on)1 = 21 m MAX. (VGS = 10 V, ID = 10 A)
RDS(on)2 = 33m MAX. (VGS = 4.5 V, ID = 10A)
RDS(on)3 = 43m MAX. (VGS = 4 V, ID = 10A)
Low Ciss: Ciss =730 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Symbol
Rating
Unit
VDSS
30
V
VGSS
20
V
ID
30
A
Idp *
80
A
1.0
PD
W
30
Tch
150
Tstg
-55 to +150
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=30V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=10A
5 10
S
VGS=10V,ID=10A
17.2 21 m
VGS=4.5V,ID=10A
26 33 m
VGS=4.0V,ID=10A
33 43 m
730
pF
VDS=10V,VGS=0,f=1MHZ
250
pF
120
pF
28
ns
420
ns
ID=10A,VGS(on)=10V,RG=10 ,VDD=15V
47
ns
64
ns
15
nC
VDD = 24V, VGS = 10 V, ID = 20A
2.8
nC
4.1
nC
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