2SK3355 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
TraMnOsiSstFIoCErsT
Product specification
2SK3355
Features
Super low on-state resistance:
RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 8.8m MAX. (VGS = 4 V, ID = 42 A)
Low Ciss: Ciss = 9800 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS(AC)
ID
Idp *
PD
Tch
Tstg
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
Rating
Unit
60
V
20
V
83
A
332
A
1.5
W
100
150
-55 to +150
1 Gate
2 Drain
3 Source
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=42A
39 77
S
VGS=10V,ID=42A
4.6 5.8 m
VGS=4V,ID=42A
6.1 8.8 m
9800
pF
VDS=10V,VGS=0,f=1MHZ
1500
pF
630
pF
130
ns
1450
ns
ID=42A,VGS(on)=10V,RG=10 ,VDD=30V
510
ns
510
ns
170
nC
VDD = 48V, VGS = 10 V, ID = 83A
28
nC
46
nC
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