2SK3354 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SMD Type
TransistIoCrs
Product specification
2SK3354
Features
Super low on-state resistance:
RDS(on)1 = 8.0 m MAX. (VGS = 10 V, ID = 42 A)
RDS(on)2 = 12 m MAX. (VGS = 4 V, ID = 42 A)
Low Ciss: Ciss = 6300 pF TYP.
Built-in gate protection diode
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation TA=25
TC=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
VDSS
VGSS(AC)
ID
Idp *
PD
Tch
Tstg
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Rating
Unit
60
V
20
V
83
A
332
A
1.5
W
100
150
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gat cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
QG
QGS
QGD
Testconditons
Min Typ Max Unit
VDS=60V,VGS=0
10
A
VGS= 20V,VDS=0
10
A
VDS=10V,ID=1mA
1.5 2.0 2.5 V
VDS=10V,ID=41A
35 59
S
VGS=10V,ID=42A
6.3 8.0 m
VGS=4V,ID=42A
8.0 12 m
6300
pF
VDS=10V,VGS=0,f=1MHZ
1000
pF
490
pF
100
ns
1500
ns
ID=42A,VGS(on)=10V,RG=10 ,VDD=30V
300
ns
440
ns
106
nC
VDD = 48V, VGS = 10 V, ID = 83A
20
nC
30
nC
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