2SK3111 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

Features
Gate voltage rating 30 V
Low on-state resistance
RDS(on) = 180m MAX. (VGS = 10 V, ID = 10A)
Low input capacitance
Ciss = 1000 pF TYP. (VDS = 10 V, VGS = 0 V)
Avalanche capability rated
Built-in gate protection diode
Surface mount device available
MOSFET
Product specification
2SK3111
TO-263
+0.2
4.57 _+0.1
-0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
200
V
VGSS
30
V
ID
20
A
Idp *
60
A
62
PD
W
1.5
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to source cut off voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
Min Typ Max Unit
VDS=200V,VGS=0
100
A
VGS= 30V,VDS=0
10
A
VDS=10V,ID=1mA
2.5
4.5 V
VDS=10V,ID=10A
3.0
S
VGS=10V,ID=10A
120 180 m
1000
pF
VDS=10V,VGS=0,f=1MHZ
300
pF
150
pF
25
ns
ID=10A,VGS(on)=10V,VDD=100V,RG=10
90
ns
80
ns
40
ns
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