2SK3105 Datasheet, PDF (1/2 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

Product specification
2SK3105
DESCRIPTION
The 2SK3105 is a switching device which can be driven
directly by a 4 V power source.
The 2SK3105 features a low on-state resistance and excellent
switching characteristics, and is suitable for applications such
as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.4
+0.1
–0.05
0.16^{+–00..016}
3
FEATURES
• Can be driven by a 4 V power source
• Low on-state resistance
RDS(on)1 = 95 mΩ MAX. (VGS = 10 V, ID = 1.5 A)
RDS(on)2 = 135 mΩ MAX. (VGS = 4.5 V, ID = 1.5 A)
RDS(on)3 = 150 mΩ MAX. (VGS = 4.0 V, ID = 1.5 A)
1
2
0.95 0.95
1.9
2.9 ±0.2
0 to 0.1
0.65
0.9 to 1.1
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3105
3-pin Mini Mold (Thin Type)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note1
ID(DC)
±2.5
A
ID(pulse)
±10
A
Total Power Dissipation
Total Power Dissipation ^Note2
PT1
0.2
W
PT2
1.25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
1 : Gate
2 : Source
3 : Drain
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Marking: XA
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1 %
2. Mounted on FR4 Board, t ≤ 5 sec.
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
http://www.twtysemi.com
[e-mail]
4008-318-123
1 of 2