2SK3025 Datasheet, PDF (1/1 Pages) Panasonic Semiconductor – Silicon N-Channel Power F-MOS FET

SMD Type
MOSFICET
Product specification
2SK3025
Features
Avalanche energy capacity guaranteed
High-speed switching
Low ON-resistance
No secondary breakdown
Low-voltage drive
High electrostatic breakdown voltage
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
TC=25
TA=25
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate threshold voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
30
A
Idp *
60
A
20
PD
W
1
Tch
150
Tstg
-55 to +150
1 Gate
2 Drain
3 Source
Symbol
VDSS
IDSS
IGSS
Vth
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
ID=1mA,VGS=0
VDS=50V,VGS=0
VGS= 20V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=15A
VGS=10V,ID=15A
VGS=4V,ID=15A
VDS=10V,VGS=0,f=1MHZ
ID=15A,VGS(on)=10V,RL=2 ,VDD=30V
Min Typ Max Unit
60
V
10
A
10
A
1
2.5 V
9 18
S
25 40 m
35 55 m
1200
pF
400
pF
200
pF
10
ns
20
ns
350
ns
140
ns
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4008-318-123
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