2SK2925S Datasheet, PDF (1/1 Pages) Guangdong Kexin Industrial Co.,Ltd – N-Channel Silicon MOSFET

SMD Type
Product specification
2SK2925S
Features
Low on-resistance
RDS =0.060 typ.
High speed switching
4V gate drive device can be driven from 5V source
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Rating
Unit
VDSS
60
V
VGSS
20
V
ID
10
A
Idp *
40
A
PD
20
W
Tch
150
Tstg
-55 to +150
Symbol
VDSS
IDSS
IGSS
VGS(off)
Yfs
RDS(on)
Ciss
Coss
Crss
ton
tr
toff
tf
Testconditons
ID=10mA,VGS=0
VDS=60V,VGS=0
VGS= 16V,VDS=0
VDS=10V,ID=1mA
VDS=10V,ID=5A
VGS=10V,ID=5A
VGS=4V,ID=5A
VDS=10V,VGS=0,f=1MHZ
ID=5A,VGS(on)=10V,RL=6
1 Gate
2 Drain
3 Source
Min Typ Max Unit
60
V
10
A
10
A
1.5
2.5 V
5
8
S
0.060 0.080
0.095 0.160
350
pF
190
pF
70
pF
10
ns
55
ns
60
ns
70
ns
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