2SK2859 Datasheet, PDF (1/1 Pages) Sanyo Semicon Device – Ultrahigh-Speed Switching Applications

SSMMDD TTyyppee
MOSFIECICT
Product specification
2SK2859
Features
Low On resistance.
Ultrahigh-speed switching.
4V drive.
1 : No Contact
2 : Source
3 : No Contact
4 : Gate
5-8 : Drain
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
* PW 10 s,Duty Cycle 1%
Symbol
Rating
Unit
VDSS
100
V
VGSS
15
V
ID
2
A
Idp *
8
A
PD
1.6
W
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain to source breakdown voltage
Drain cut-off current
Gate leakage current
Gate to source cutoff voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Diode forward voltage
Symbol
Testconditons
Min Typ Max Unit
VDSS ID=1mA,VGS=0
100
V
IDSS VDS=100V,VGS=0
100
A
IGSS VGS= 12V,VDS=0
10
A
VGS(off) VDS=10V,ID=1mA
1.0
2.0 V
Yfs VDS=10V,ID=2A
2.5 4
S
VGS=10V,ID=2A
RDS(on)
VGS=4V,ID=2A
0.3 0.4
0.4 0.55
Ciss
380
pF
Coss VDS=20V,VGS=0,f=1MHZ
80
pF
Crss
15
pF
ton
10
ns
tr
13
ns
ID=2A,VGS(on)=10V,RL=25 ,VDD=50V
toff
70
ns
tf
30
ns
VSD IS=2A,VGS=0
1 1.2 V
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