2SK2858 Datasheet, PDF (1/2 Pages) NEC – N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

Product specification
2SK2858
DESCRIPTION
The 2SK2858 is a switching device which can be driven directly by a
2.5-V power source.
The 2SK2858 has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
• Can be driven by a 2.5-V power source
• Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER
2SK2858
PACKAGE
SC-70(SSP)
PACKAGE DRAWING (Unit : mm)
2.1 ± 0.1
1.25 ± 0.1
2
1
3
Marking
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage
VDSS
30
V
Gate to Source Voltage
VGSS
±20
V
Drain Current (DC)
Drain Current (pulse) ^Note
ID(DC)
±0.1
A
ID(pulse)
±0.4
A
5 Total Power Dissipation
PT
150
mW
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg –55 to +150 °C
Note PW ≤ 10 µs, Duty Cycle ≤ 1 %
EQUIVALENT CIRCUIT
Gate
Drain
Electrode
Connection
1.Source
Internal _2.Gate
Diode _3.Drain
Gate
Protection
Diode
Source
Marking: G24
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
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