2SK2824 Datasheet, PDF (1/2 Pages) Toshiba Semiconductor – N CHANNEL MOS TYPE (FOR PORTABLE EQUIPMENT HIGH SPEED SWITCH, ANALOG SWITCH APPLICATIONS)

SMD Type
Analog Switch Applications
• High input impedance
• 1.5 V gate drive
• Low gate threshold voltage: V_th = 0.5~1.0 V
• Small package
Marking
Equivalent Circuit
Product specification
2SK2824
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Symbol
Rating
Unit
V_DS
V_GSS
I_D
P_D
T_ch
T_stg
20
V
10
V
100
mA
100
mW
150
°C
−55~150
°C
Weight: 0.006 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note: This transistor is electrostatic sensitive device.
Please handle with caution.
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