2SK1954 Datasheet, PDF (1/1 Pages) NEC – SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

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Product specification
2SK1954
Features
Low on-resistance
RDS(on)=0.65 (VGS=10V,ID=2A)
Low Ciss Ciss=300pF typ
Built-in G-S Gate Protection Diode
High Avalanche Capability Ratings
TO-252
6.50+0.15
-0.15
5.30+0.2
-0.2
2.30+0.1
-0.1
0.50+0.8
-0.7
Unit: mm
0.80+0.1
-0.1
0.127
max
2.3
4.60^+0.15
-0.15
0.60+0.1
-0.1
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current
Power dissipation
Channel temperature
Storage temperature
Symbol
Rating
Unit
VDSS
180
V
VGSS
20
V
ID
4.0
A
PD
20
W
Tch
150
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Drain cut-off current
Gate leakage current
Gate to Source Cutoff Voltage
Forward transfer admittance
Drain to source on-state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Symbol
Testconditons
IDSS VDS=180V,VGS=0
IGSS VGS= 20V,VDS=0
VGS(off) VDS=10V,ID=1mA
Yfs VDS=10V,ID=2.0A
RDS(on) VGS=10V,ID=2.0A
Ciss
Coss VDS=10V,VGS=0,f=1MHZ
Crss
td(on)
tr
td(off)
ID=2A,VGS(on)=10V,RL=50
tf
Min Typ Max Unit
100
A
10
A
2.0
4.0 V
0.5
S
0.52 0.65
300
pF
170
pF
50
pF
9
ns
12
ns
28
ns
12
ns
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